A 4H-SiC high-power-density VJFET as controlled current limiter

6H-SiC Based Power VJFET and Its Temperature Dependence

link.springer.com/chapter/10.1007%2F978-3-642-37949-9_28#page-1 1/4 Look Inside Get Access Find out how to access preview-only content Quality, Reliability, Security and Robustness in Heterogeneous Networks Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering Volume 115, 2013, pp 325-332 6H-SiC Based Power VJFET and Its Temperature Dependen...

Fast Switching 1200V Normally-Off SiC VJFET Power Modules

An all SiC based power module for use in high frequency and high efficiency applications has been developed. Using parallel combinations of 1200V enhancement mode SiC VJFETs and Schottky diodes, a total on-resistance of only 10m was achieved at 100A drain current in a commercially available standard module configured as a half-bridge circuit. Careful attention to module layout, gate driver desi...

High Performance Ultraviolet 4H-SiC Avalanche Photodiodes

Development of High Quality 4H-SiC Thick Epitaxy for Reliable High Power Electronics Using Halogenated Precursors

The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information . Send comments regarding this burden estimate or any other aspect of this collection of information, inclu...

Fault Current Limiter for a Distributed Power System

The up-gradation of an Electrical power generation network results in higher levels of short circuit fault current. Thereby, the existing protection equipment like circuit breakers, isolators and fuses become under capacity and not capable of withstanding higher short circuit currents. Thus the system is highly vulnerable to the adverse effects of short circuits. Replacing the whole protection ...